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TC4427A Dataheets PDF



Part Number TC4427A
Manufacturers TelCom Semiconductor
Logo TelCom Semiconductor
Description (TC4426A - TC4428A) 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
Datasheet TC4427A DatasheetTC4427A Datasheet (PDF)

TC4426A TC4427A TC4428A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES s s s s s s High Peak Output Current . 1.5A Wide Operating Range . 4.5V to 18V High Capacitive Load Drive Capability .. 1000 pF in 25 nsec Typ Short Delay Time ... 30 nsec Typ Matched Rise, Fall and Delay Times Low Supply Current — With Logic “1” Input ... 1 mA Typ — With Logic “0” Input ..

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TC4426A TC4427A TC4428A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES s s s s s s High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability ................. 1000 pF in 25 nsec Typ Short Delay Time ................................. 30 nsec Typ Matched Rise, Fall and Delay Times Low Supply Current — With Logic “1” Input ............................ 1 mA Typ — With Logic “0” Input ......................... 100 µA Typ Low Output Impedance ................................ 7Ω Typ Latch-Up Protected: Will Withstand 0.5A Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .................................................... 4 kV Pinout Same as TC426/TC427/TC428 1 GENERAL DESCRIPTION The TC4426A/4427A/4428A are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC4426A/4427A/4428A can easily switch 1000 pF gate capacitances in under 30 ns, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. 2 3 4 5 6 7 s s s s s PIN CONFIGURATIONS NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A ORDERING INFORMATION Part No. Package 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP Temp. Range 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C TC4426A 6 VDD 5 OUT B TC4427A 6 VDD 5 OUT B TC4428A 6 VDD 5 OUT B 2 2,4 7,5 2,4 7,5 4 INVERTING NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP. NONINVERTING 7 TC4426ACOA TC4426ACPA TC4426AEOA TC4426AEPA TC4426AMJA TC4427ACOA TC4427ACPA TC4427AEOA TC4427AEPA TC4427AMJA TC4428ACOA TC4428ACPA TC4428AEOA TC4428AEPA TC4428AMJA 5 DIFFERENTIAL FUNCTIONAL BLOCK DIAGRAM INVERTING OUTPUTS 2 mA 300 mV VDD OUTPUT NONINVERTING OUTPUTS INPUT 4.7V TC4426A/TC4427A/TC4428A GND EFFECTIVE INPUT C = 12 pF NOTES: 1. TC4426A has 2 inverting drivers; TC4427A has 2 noninverting drivers. 2. TC4428A has one inverting and one noninverting driver. 3. Ground any unused driver input. 8 TC4426A/7A/8A-9 10/21/96 TELCOM SEMICONDUCTOR, INC. 4-251 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B .. (VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C M Version ....................................... – 55°C to +125°C Package Power Dissipation (TA ≤ 70°C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Symbol Input VIH VIL IIN Logic 1 High Input V.


TC4428A TC4427A TC4426A


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