DatasheetsPDF.com

13003BR

MJE13003BR

Description

www.DataSheet4U.com MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Colle...

ETC

Download 13003BR Datasheet

Similar Datasheet

13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
13003 NPN Epitaxial Silicon Transistor - Elite Enterprises
13003 HIGH VOLTAGE AND HIGH SPEED SWITCH - HSiN
13003AD Bipolar Junction Transistor - Jingdao
13003ADA NPN SILICON TRANSISTOR - Unisonic Technologies
13003ADG NPN SILICON TRANSISTOR - Unisonic Technologies
13003BDG NPN SILICON TRANSISTOR - Unisonic Technologies
13003BR MJE13003BR - ETC
13003BS NPN SILICON TRANSISTOR - Unisonic Technologies
13003CDH NPN SILICON TRANSISTOR - Unisonic Technologies

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)