Document
STPS15L60C
Power Schottky rectifier
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Features
Very small conduction losses Negligible switching losses Low forward voltage drop Avalanche specification ECOPACK®2 compliant component for DPAK
on demand
Datasheet - production data
Description
Dual center tab Schottky rectifier suited for switched mode power supply and high frequency DC to DC converters.
Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection applications.
Table 1. Device summary
Symbol
Value
IF(AV) VRRM Tj(max) VF (typ)
2 x 7.5 A 60 V 150 °C 0.52 V
December 2015
This is information on a product in full production.
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Characteristics
1
Characteristics
STPS15L60C
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
60
V
IF(RMS) Forward rms current
10
A
IF(AV)
Average forward current, δ = 0.5, square
wave
Tc = 135 °C(1)
Per diode Per device
7.5 15
A
IFSM PARM
Surge non repetitive forward current Repetitive peak avalanche power
tp = 10 ms sinusoidal tp = 10 µs, Tj = 125 °C
75
A
265
W
Tstg
Storage temperature range
Tj
Maximum operating junction temperature(2)
-65 to +175
°C
150
°C
1. Value based on Rth(j-c) max (per diode)
2.
d----P-----t--o----t dTj
R-----t--h-----1--j---–----a----
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c) Rth(c)
Junction to case Coupling
Per diode Total
4
2.4
°C/W
0.7
When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Symbol
Table 4. Static electrical characteristics (per diode)
Parameter
Test Conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current VF(1) Forward voltage drop
1. Pulse test: tp = 380 µs, < 2%
Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C
VR = VRRM IF = 7.5 A IF = 12 A IF = 15 A
200 µA
45
60 mA
0.62
0.52 0.57
0.76 V
0.62 0.68
0.82
0.66 0.72
To evaluate the conduction losses use the following equation: P = 0.32 x IF(AV) + 0.027 IF2(RMS)
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DocID8621 Rev 4
STPS15L60C
Characteristics
Figure 1. Average forward power dissipation versus average forward current (per diode)
Figure 2. Average forward current versus ambient temperature (δ = 0.5)(per diode)
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Figure 3. Normalized avalanche power derating versus pulse duration at Tj = 125 °C
PARM (t p ) 1 PARM(10 µs)
0.1
0.01
0.001 1
t p(µs)
10
100
1000
Figure 4. Relative variation of thermal impedance junction to case versus pulse
duration
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Characteristics
STPS15L60C
Figure 5. Reverse leakage current versus reverse voltage applied
(typical values, per diode)
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Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode)
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Figure 7. Forward voltage drop versus forward current (per diode)
Figure 8. Thermal resistance junction to ambient versus copper surface under tab
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DocID8621 Rev 4
STPS15L60C
2
Package Information
Package Information
Epoxy meets UL94,V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
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DPAK package information
Figure 9. DPAK package outline
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This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed.
DocID8621 Rev 4
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