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SD4590

ST Microelectronics

RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION

® SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTE...


ST Microelectronics

SD4590

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Description
® SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE POUT =150 W MIN. GAIN = 8.5 dB MIN. IMD3 = -28dB MAX. @ POUT = 150W PEP INHERENT RUGGEDNESS: LOAD MISMATCH TOLERANCE OF 5:1 MIN. VSWR 3 dB OVERDRIVE CAPABILITY ESD SENSITIVITY, CLASS 3 (MIL STD-883D METHOD 3015) M208 epoxy sealed ORDER CODE BRANDING SD4590 SD4590 PIN CONNECTION DESCRIPTION The SD4590 is designed for both analog and digital cellular base stations over the 800 to 960 MHz frequency range, specifically those systems requiring the high linearity and efficiency afforded by class AB operation. Integrated input/output pre-matching simplifies amplifier design. Ruggedness, MTTF, and linearity are enhanced using diffused emitter resistors and refractory/gold metallization. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V CBO V CEO V EBO IC P DI SS Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 65 28 3.5 25 300 200 -65 to 150 Uni t V V V A W o o 1. Collector 2. Emitter 3.Base C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 0.60 o C/W March 2000 1/8 SD4590 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol BV CBO BV CEO BV CER BV...




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