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SD4701

ST Microelectronics

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . . DESIGNED FOR CLASS AB LINEAR OPERATION ...


ST Microelectronics

SD4701

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Description
SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN. INHERENT RUGGEDNESS: LOAD MISMATCH TOLERANCE OF 5:1 MIN. VSWR 3 dB OVERDRIVE CAPABILITY .400 x .425 6LFL (M169) epoxy sealed ORDER CODE SD4701 BRANDING SD4701 PIN CONNECTION DESCRIPTION 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO VCEO VCER VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 60 30 40 3.5 10 145 +200 − 65 to +150 V V V V A W °C °C °C/W 1/6 THERMAL DATA RTH(j-c) May 1993 Junction-Case Thermal Resistance 1.2 SD4701 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVCER BVEBO ICER hFE IC = 60 mA IC = 60 mA IC = 60 mA IE = 10 mA VCE = 26 V VCE = 10 V IE = 0 mA IB = 0 mA RBE = 75 Ω IC = 0 mA RBE = 75 Ω IC = 1 A 60 30 40 3.5 — 15 — — — — — — — — — — 15 100 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB PIN POUT GP ηc f = 1 MHz VCB = 26 V For Information Only - This Device is Collector Matched f = 960 MHz VCE = 26 V ICQ = 200 mA POUT = 45 W f = 960 MHz VCE = 26 V f = 960 MHz VCE = 26 V f = 960 MHz ...




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