50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
AGB3301
50W High Linearity Low Noise Wideband Gain Block
FEATURES
· · · · · · · · · 250-3000 MHz Frequency Range +45 dBm...
Description
AGB3301
50W High Linearity Low Noise Wideband Gain Block
FEATURES
· · · · · · · · · 250-3000 MHz Frequency Range +45 dBm Output IP3 Low Noise Figure: 2.4 dB at 900 MHz 13.5 dB Gain at 900 MHz +24 dBm P1dB SOT-89 Package Single +5V to +9V Supply Low Power: less than 1 Watt Case Temperature: -40 to +100 oC Data Sheet - Rev 2.0
APPLICATIONS
· · · · ·
Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD systems
Fixed Wireless MMDS/WLL WLAN, HyperLAN CATV
S24 Package SOT-89
PRODUCT DESCRIPTION
The AGB3301 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high output IP3, low noise figure and wide band operation, the AGB3301 is ideal for 50 W
wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3301 requires a single +5V to +9V supply, and typically consumes less than 1 Watt of power.
RF Input
RF Output / Bias
Figure 1: Block Diagram
06/2003
AGB3301
GND 4
1 RFIN
2 GND
Figure 2: Pin Out
3 RFOUT
Table 1: Pin Description
PIN 1 2 3 4
N AME RFIN GND RFOUT GND
D ESC R IPTION RF Input Ground RF Output / Bi as Ground
2
Data Sheet - Rev 2.0 06/2003
AGB3301
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PAR AMETER D evi ce Voltage RF Input Power Storage Temperature C hannel Temperature
MIN 0 -40 -
MAX +12 +15 +150 +150
U N IT VD C dB m °C °C
Stress...
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