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JDV2S01S

Toshiba Semiconductor

TOSHIBA Diode Silicon Epitaxial Planar Type


Description
JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit in mm High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj T...



Toshiba Semiconductor

JDV2S01S

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