DatasheetsPDF.com
TC58NS256DC
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM
Description
TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M × 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia DESCRIPTION 2 TM ) The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device h...
Toshiba Semiconductor
Download TC58NS256DC Datasheet
Similar Datasheet
TC58NS256BDC
256 MBit CMOS NAND EPROM
- Toshiba
TC58NS256DC
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM
- Toshiba Semiconductor
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
