SDRAM Unbuffered SODIMM
256MB, 512MB Unbuffered SODIMM
SDRAM
SDRAM Unbuffered SODIMM
144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ...
Description
256MB, 512MB Unbuffered SODIMM
SDRAM
SDRAM Unbuffered SODIMM
144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC
Revision 1.2 March 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.2 March 2004
256MB, 512MB Unbuffered SODIMM
Revision History
Revision 1.0 (January, 2004) - First release Revision 1.1 (February, 2004) - Corrected typo. Revision 1.2 (March. 2004) - Corrected package dimension.
SDRAM
Rev. 1.2 March 2004
256MB, 512MB Unbuffered SODIMM
144Pin Unbuffered SODIMM based on 512Mb B-die(x8, x16)
Ordering Information
Part Number M464S3354BTS-C(L)7A M464S6554BTS-C(L)7A Density 256MB 512MB Organization 32M x 64 64M x 64 Component Composition 32Mx16(K4S511632B) * 4EA 32Mx16(K4S511632B) * 8EA Component Package 54-TSOP(II)
SDRAM
Height 1,000mil 1,250mil
Operating Frequencies
7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2
Feature
Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence detect with EEPROM
Rev. 1.2 March 2004
256MB, 512MB Unbuffered SODIMM
PIN CONFIGURATIONS (Front side/back side)
Pin 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29...
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