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M464S3254DTS

Samsung semiconductor

32Mx64 SDRAM SODIMM based on 16Mx16 / 4Banks / 8K Refresh / 3.3V Synchronous DRAMs with SPD

M464S3254DTS M464S3254DTS SDRAM SODIMM PC133/PC100 SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V...


Samsung semiconductor

M464S3254DTS

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M464S3254DTS M464S3254DTS SDRAM SODIMM PC133/PC100 SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M464S3254DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S3254DTS consists of eight CMOS 16M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S3254DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. M464S3254DTS-L7C/C7C M464S3254DTS-L7A/C7A M464S3254DTS-L1H/C1H M464S3254DTS-L1L/C1L Max Freq. (Speed) 133MHz@CL=2 133MHz@CL=3 100MHz @ CL=2 100MHz @ CL=3 Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sam...




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