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MTD20P06HDL

Part Number	MTD20P06HDL
Manufacturer	Motorola
Description	TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
Published	Oct 5, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P06HDL/D ™ Data Sheet HDTMOS E-FET ™ High Density P...
Datasheet	MTD20P06HDL PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P06HDL/D ™ Data Sheet HDTMOS E-FET ™ High Density Power FET DPAK for Surface Mount Designer's MTD20P06HDL Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads.
The avalanche energy capability is specified to eliminate the guesswork in designs where inductive ...

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