MTD2N40E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche and switch efficiently. This new high energy device also offers a drain–to–soure diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add –T4 Suffix to Part Number Replaces MTD1N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25...