MBM29LV016T

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20855-4E FLASH MEMORY CMOS 16M (2M × 8) BIT MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES Single 3.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as E2PROMs Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) Minimum 100,000 program/erase cycles High performance 80 ns maximum access time Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture T = Top sector B = Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded programTM Algorithms Automatically programs and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode Low VCC write inhibit ≤ 2.5 V Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device Sector protection Hardware method disables any combination of sectors from prog...