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HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
VDSS IXFR 30N50Q IXFR 32N50Q
ID25
RDS(on) 0.16 W 0.15 W
500 V 29 A 500 V 30 A trr £ 250 ns
Maximum Ratings 500 500 ±20 ±30 30N50 32N50 30N50 32N50 30N50 32N50 30 120 30 1.5 45 5 310 -55 ... +150 150 -55 ... +150 300 2500 6 V V V V A A A J mJ V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E 153432
G
D
Isolated back surface* G = Gate S = Source * Patent pending D = Drain
Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 30N50 32N50 100 1 0.16 0.15 V V nA mA mA W W Advantages • Easy assembly • Space savings • High power density
98608B (7/00)
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1, 2
DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
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IXFR 30N50Q IXFR 32N50Q
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 18 28 3950 S pF pF pF ns ns ns ns nC nC nC 0.40 0.15 K/W K/W
Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
Symbol
Test Conditions
ISOPLUS 247 (IXFR) OUTLINE
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = IT
VGS = 0 V, VDS = 25 V, f = 1 MHz
640 210 35
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT RG = 1 W (External),
42 75 20 150
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
26 85
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Note: 1. IT test condition: IXFR30N50:.