STP7NC40

N-CHANNEL 400V - 0.75Ω - 6A TO-220 PowerMESH™II MOSFET TYPE STP7NC40 s s s s STP7NC40 VDSS 400 V RDS(on) <1Ω ID 6A TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 1 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 400 400 ± 30 6 4 24 100 0.8 3 –65 to 150 150 (1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area March 2001 1/8 STP7NC40 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.25 62.5 0.5 300 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTI...