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STS5DNE30L Dataheets PDF



Part Number STS5DNE30L
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-Channel MOSFET
Datasheet STS5DNE30L DatasheetSTS5DNE30L Datasheet (PDF)

® STS5DNE30L N - CHANNEL 30V - 0.039Ω - 5A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS5DNE30L s s V DSS 30 V R DS(on) < 0.045 Ω ID 5A s TYPICAL RDS(on) = 0.039 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characte.

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® STS5DNE30L N - CHANNEL 30V - 0.039Ω - 5A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS5DNE30L s s V DSS 30 V R DS(on) < 0.045 Ω ID 5A s TYPICAL RDS(on) = 0.039 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Single Operation Drain Current (continuous) at T c = 100 o C Single Operation Drain Current (pulsed) Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Sinlge Operation o o Value 30 30 ± 20 5 3.1 20 2 1.6 Unit V V V A A A W W IDM ( • ) P tot (•) Pulse width limited by safe operating area December 1998 1/5 STS5DNE30L THERMAL DATA R thj-amb Tj T stg *Thermal Resistance Junction-ambient Single Operation Dual Operation Maximum Operating Junction Temperature Storage Temperature 78 62.5 150 -55 to 150 o o C/W C/W o C o C (*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10 V V GS = 4.5 V Test Conditions I D = 250 µ A I D = 2.5 A I D = 2.5 A 20 Min. 1 Typ. 1.7 0.039 0.054 Max. 2.5 0.045 0.065 Unit V Ω Ω A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 2.5 A V GS = 0 V Min. Typ. 6 TBD Max. Unit S pF pF pF 2/5 STS5DNE30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 15 V R G = 4.7 Ω V DD = 24 V ID = 2.5 A V GS = 4.5 V ID = 5 A V GS = 4.5 V Min. Typ. TBD Max. Unit ns ns nC nC nC TBD SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 24 V R G = 4.7 Ω ID =.


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