Document
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STS5DNE30L
N - CHANNEL 30V - 0.039Ω - 5A SO-8 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STS5DNE30L
s s
V DSS 30 V
R DS(on) < 0.045 Ω
ID 5A
s
TYPICAL RDS(on) = 0.039 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Single Operation Drain Current (continuous) at T c = 100 o C Single Operation Drain Current (pulsed) Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Sinlge Operation
o o
Value 30 30 ± 20 5 3.1 20 2 1.6
Unit V V V A A A W W
IDM ( • ) P tot
(•) Pulse width limited by safe operating area
December 1998
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STS5DNE30L
THERMAL DATA
R thj-amb
Tj T stg
*Thermal Resistance Junction-ambient
Single Operation Dual Operation Maximum Operating Junction Temperature Storage Temperature
78 62.5 150 -55 to 150
o o
C/W C/W o C o C
(*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 20 V
T c = 125 o C
ON (∗)
Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10 V V GS = 4.5 V Test Conditions I D = 250 µ A I D = 2.5 A I D = 2.5 A 20 Min. 1 Typ. 1.7 0.039 0.054 Max. 2.5 0.045 0.065 Unit V Ω Ω A
I D(on)
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 2.5 A V GS = 0 V Min. Typ. 6 TBD Max. Unit S pF pF pF
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STS5DNE30L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 15 V R G = 4.7 Ω V DD = 24 V ID = 2.5 A V GS = 4.5 V ID = 5 A V GS = 4.5 V Min. Typ. TBD Max. Unit ns ns nC nC nC
TBD
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 24 V R G = 4.7 Ω ID =.