N-CHANNEL 20V - 0.030 Ω - 5A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET
TYPE STS5DNF20V
s s s
STS5DNF20V
VDSS 20 V
RDS...
N-CHANNEL 20V - 0.030 Ω - 5A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET
TYPE STS5DNF20V
s s s
STS5DNF20V
VDSS 20 V
RDS(on) < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V )
ID 5A
s
TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Single Operation Drain Current (continuous) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 20 20 ± 12 5 3 20 1.6 2 Unit V V V A A A W W
() Pulse width limited by safe operating area. August 2002
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STS5DNF20V
THERMAL DATA
Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Single Operation Thermal Resistance Junction-ambient Dual Op...