SD1728 (TH430)
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
. . . . . . .
OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30...
SD1728 (TH430)
RF & MICROWAVE
TRANSISTORS HF SSB APPLICATIONS
. . . . . . .
OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER P OUT = 250 W PEP WITH 14.5 dB GAIN
.550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430
PIN CONNECTION
DESCRIPTION The SD1728 is a 50 V epitaxial silicon
NPN planar
transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
110 55 4.0 40 330 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
November 1992
Junction-Case Thermal Resistance
0.4
°C/W
1/9
SD1728 (TH430)
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC
Symbol
I C = 200mA I C = 200mA I E = 20mA VCE = 30V VCE = 60V VCE = 6V
VBE = 0V IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 10A
110 55 4.0 — — 15
— — — — — —
— — — 10 10 45
V V V mA mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT G P* IMD* η c* COB
Note:
f = 30 MHz POUT = 250 W PEP POUT = 250 W PEP POUT = 250 W PEP f = 1 MHz
VCC = 50 V VCC = 50 V VCC = 50 V VCC = 50 V VCB = 50 V
ICQ = 150 mA ICQ = 150 mA ICQ = 1...