SD1730 (TH560)
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
. . . . . . . .
OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −3...
SD1730 (TH560)
RF & MICROWAVE
TRANSISTORS HF SSB APPLICATIONS
. . . . . . . .
OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN
.500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING TH560
PIN CONNECTION
DESCRIPTION The SD1730 is a 28 V epitaxial silicon
NPN planar
transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
70 35 4.0 16 320 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
September 7, 1994
Junction-Case Thermal Resistance
0.6
°C/W
1/6
SD1730 (TH560)
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC
Symbol
I C = 100 mA I C = 200 mA I E = 20 mA VCE = 30 V VCE = 35 V VCE = 5 V
VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 7 A
70 35 4.0 — — 15
— — — — — —
— — — 5 5 60
V V V mA mA —
Test Conditions
Value Min . Typ. Max.
Unit
POUT PG* IMD* η c* COB
f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz
VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V VCE = 28 V
ICQ ...