MPS3646

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3646/D Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3646 Motorola Preferred Device 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous — 10 ms Pulse Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 15 40 40 5.0 300 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65°C) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — 0.5 3.0 40 15 40 5.0 — — — — Vdc Vdc Vdc Vdc mAdc v 300 ms; Duty Cycle v 2.0%. Preferred devices are Motorola recommen...