MTY10N100E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY10N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage and high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM ® D G S Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS RθJC RθJA TL CASE 340G–02, STYLE 1 TO–264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Si...