MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY30N50E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY30N50E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect
Transistor
Designer's
MTY30N50E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
D
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
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G S Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS RθJC RθJA TL
CASE 340G–02, STYLE 1 TO–264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, P...