FJPF5555

FJPF5555 FJPF5555 High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Value 1050 400 14 5 10 40 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO hFE VCE(sat) VBE(sat) Cob tON tSTG tF tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * DC Test Condition IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=10mA VCE=3V, IC=0.8A IC=1A, IB=0.2A IC=3.5A, IB=1.0A IC=3.5A, IB=1.0A VCB=10V, f=1MHz VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250Ω VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A RL=100Ω Min. 1050 400 14 10 20 Typ. Max. Units V V V Current Gain 40 0.5 1.5 1.2 45 1.0 1.2 0.3 2.0 2.5 0.3 V V V pF µs µs µs µs µs µs Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn On Time Storage Time Fall Time Turn On Time Storage Time Fall Time * Pulse test: PW≤300µs, Duty Cycle≤2% ©2004 Fairchild Semiconductor Corporation Rev. A, June 2004 FJPF5555 Typical Characteristics 5...