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SSM3K03FE

Toshiba Semiconductor
Part Number SSM3K03FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOS Type FET
Published Sep 28, 2005
Detailed Description SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog...
Datasheet PDF File SSM3K03FE PDF File

SSM3K03FE
SSM3K03FE


Overview
SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications · · · · 2.
5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.
7~1.
3 V Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 -55~150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2HA1B Weight: 2.
3 mg (typ.
) Marking Equivalent Circuit 1 2003-03-27 SSM3K03FE Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current ...



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