TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01F
SSM3J01F
High Speed Switching Applications
Unit: mm
Small package Low on resistance : Ron = 0.4 Ω (max) (VGS = −4 V)
: Ron = 0.6 Ω (max) (VGS = −2.5 V) Low gate threshold voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gat...
