SUM27N20-78

SUM27N20-78 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) 0.078 at VGS = 10 V 0.083 at VGS = 6 V TO-263 ID (A) 27 26 FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS Isolated DC/DC Converters - Primary-Side Switch D GD S Top View SUM27N20-78 Ordering Information: SUM27N20-78-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 200 ± 20 27 15.5 60 18 16.2 150b 3.75 - 5...