Document
SUM110N02-03P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
20
FEATURES
rDS(on) (W) ID (A)a
110a 110a
0.0032 @ VGS = 10 V 0.0052 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier
APPLICATIONS
D Synchronous Buck DC/DC Conversion - Desktop - Server D Load Switch
D
TO-263
G DRAIN connected to TAB G D S S N-Channel MOSFET
Top View SUM110N02-03P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_Cd TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM PD TJ, Tstg
Limit
20 "20 110a 102 300 120c 3.75 -55 to 175
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Mount)d
Symbol
RthJA RthJC
Limit
40 1.25
Unit
_C/W
Document Number: 72096 S-22451—Rev. A, 20-Jan-03
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SUM110N02-03P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 125_C VDS = 16 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 15 0.0042 120 0.0026 0.0032 0.0048 0.0055 0.052 S W 20 V 0.8 3 "100 1 50 250 A mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Gate Resistance Turn-On Delay Timeb Rise Timeb Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W VDS = 10V, VGS = 4.5 V, ID = 110 A VGS = 0 V, VDS = 10 V, f = 1 MHz 5100 1650 750 40 14 13 0.85 15 11 45 10 25 20 70 15 ns W 60 nC pF
Turn-Off Delay Timeb Fall Timeb
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM Qrr IF = 50 A, di/dt = 100 A/ms IF = 110 A, VGS = 0 V 1.1 45 1.8 0.041 110 300 1.5 70 2.7 0.095 A V ns A mC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing.
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Document Number: 72096 S-22451—Rev. A, 20-Jan-03
SUM110N02-03P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
250
Vishay Siliconix
Output Characteristics
VGS = 10 thru 5 V 200
Transfer Characteristics
200 I D - Drain Current (A) I D - Drain Current (A)
160 4V
150
120
100
80 TC = 125_C 40 -55 _C 25_C
50 3V 0 0 2 4 6 8 10
0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
200 TC = -55_C r DS(on) - On-Resistance ( W ) 160 g fs - Transconductance (S) 25_C 120 125_C 0.0045 0.0060
On-Resistance vs. Drain Current
VGS = 4.5 V
0.0030
VGS = 10 V
80
0.0015
40
0 0 15 30 ID - Drain Current (A) 45 60
0.0000 0 20 40 60 80 100
ID - Drain Current (A)
Capacitance
7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 Crss 1000 0 0 5 10 15 20 Coss 10
Gate Charge
V GS - Gate-to-Source Voltage (V)
8
VDS = 10 V ID = 50 A
6
4
2
0 0 20 40 60 80
VDS - Drain-to-Source Voltage (V) Document Number: 72096 S-22451—Rev. A, 20-Jan-03
Qg - Total Gate Charge (nC) www.vishay.com
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SUM110N02-03P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.8 VGS = 10 V ID = 30 A I S - Source Current (A) 100
Source-Drain Diode Forward Voltage
1.6 r DS(on) - On-Resistance (W ) (Normalized)
1.4
TJ = 150_C 10 TJ = 25_C
1.2
1.0
0.8
0.6 -50
-25
0
25
50
75
100
125
150
175
1 0
0.3
0.6
0.9
1.2
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs. Junction Temperature
30
28 V (BR)DSS (V)
ID = 10 mA
26
24
22
20 -50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
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Document Number: 72096 S-22451—Rev. A, 20-Jan-03
SUM110N02-03P
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
120 1000 Limited by rDS(on) 100 I D - Drain Current (A) 80 I D - Drain Current (A) 10 ms 100 ms
Vishay Siliconix
Safe Operating Area
100
60
10
40
1 ms 10 ms 100 ms dc TC = 25_C Single Pulse
1 20
0 0 25 5.