N-Channel 30-V (D-S) 175C MOSFET
SUM110N03-03
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
FEATURES
...
Description
SUM110N03-03
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
FEATURES
rDS(on) (W) ID (A)a
110a
0.0025 @ VGS = 10 V
D D D D
D
TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
APPLICATIONS
D Automotive 12-V Boardnet
TO-263
G DRAIN connected to TAB G D S S Ordering Information: SUM110N03-03 N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C d TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
30 "20 110a 110a 350 70 245 242c 3.75 - 55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Mount)d
Symbol
RthJA RthJC
Limit
40 0.62
Unit
_C/W
Document Number: 72260 S-31257—Rev. A, 16-Jun-03
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SUM110N03-03
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS =...
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