SUM110N04-04

SUM110N04-04 New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES rDS(on) (W) ID (A) 110 a D TrenchFETr Power MOSFETS: 1.8-V Rated D 175_C Junction Temperature 0.0035 @ VGS = 10 V APPLICATIONS D Automotive - ABS - 12-V EPS - Motor Drivers D TO-263 G G D S Top View SUM110N04-04 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 20 110a 107a 350 60 180 250c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72077 S-22450—Rev. B, 20-Jan-03 www.vishay.com Mount)d Symbol RthJA RthJC Limit 40 0.6 Unit _C/W 1 SUM110N04-04 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 40...