N-Channel 60-V (D-S) 200C MOSFET
SUM110N06-04L
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
FEATURES...
Description
SUM110N06-04L
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
FEATURES
rDS(on) (W) ID (A)
110 a
0.0035 @ VGS = 10 V 0.005 @ VGS = 4.5 V
D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package
APPLICATIONS
D
TO-263
D Automotive – Boardnet 42-V EPS and ABS – Motor Drives D High Current D DC/DC Converters
G
G
D S S N-Channel MOSFET
Top View SUM110N06-04L
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C)d TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
60 "20 110a 110a 440 75 280 437.5c 3.7 –55 to 200
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient—PCB Mountd Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material).
Symbol
RthJA RthJC
Limit
40 0.4
Unit
_C/W
Document Number: 71704 S-20417—Rev. B, 08-Apr-02
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SUM110N06-04L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ...
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