SUM110N06-04L

SUM110N06-04L New Product Vishay Siliconix N-Channel 60-V (D-S) 200_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 110 a 0.0035 @ VGS = 10 V 0.005 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D TO-263 D Automotive – Boardnet 42-V EPS and ABS – Motor Drives D High Current D DC/DC Converters G G D S S N-Channel MOSFET Top View SUM110N06-04L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C)d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 110a 110a 440 75 280 437.5c 3.7 –55 to 200 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient—PCB Mountd Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 0.4 Unit _C/W Document Number: 71704 S-20417—Rev. B, 08-Apr-02 www.vishay.com 1 SUM110N06-04L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ...