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STGP3NB60K - STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH™ IGBT
TYPE STGP3NB60K STGD3NB60K STGP3NB60KD STGP3NB60KDFP STGB3NB60KD
s s s s s s s
VCES 600 V 600 V 600 V 600 V 600 V
VCE(sat) (Typ) @125°C < < < < < 2V 2V 2V 2V 2V
IC @125°C 3A 3A 3A 3A 3A
3 1 2
1
3 2
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED
TO-220
TO-220FP
3
3 1
1
D PAK
2
DPAK
INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. Std. Version APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES
s
“D” Version
ORDERING INFORMATION
SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE TAPE & REEL
May 2002
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ABSOLUTE MAXIMUM RATINGS
Symbol Parameter TO-220 D2PAK VCES VECR VGE IC IC ICM (n) If (1) Ifm (1) PTOT VISO Tstg Tj Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 100°C Collector Current (pulsed) Forward Current Forward Current Pulsed Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C. Storage Temperature Max. Operating Junction Temperature -68 6 3 24 3 24 25 0.75 2500 – 55 to 150 150 -60 Value TO-220FP 600 20 ±20 6 3 24 6 3 24 DPAK V V V A A A A A W W/°C V °C Unit
(n ) Pulse width limited by safe operating area (1) For “D” version only
THERMAL DATA
TO-220 D2PAK Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1.8 62.5 0.5 TO-220FP 5 DPAK 2.1 100 °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS
Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20V , VCE = 0 VCE = VGE, IC = 250µA VGE = 15V, VGE = 15V, IC = 3 A IC = 3 A, Tj =125°C 5 2.3 1.9 Min. 600 50 500 ±100 7 2.8 Typ. Max. Unit V µA µA nA V V V
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STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
SWITCHING PARAMETERS
Symbol gfs Cies Coes Cres Qg Qge Qgc tscw td(on) tr (di/dt)on Eon tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Short Circuit Withstand Time Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Test Conditions VCE = 25V, Ic = 3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 2.4 218 33 5.8 14 3.3 7.5 10 14 5 520 30 122 26.5 33 100 58 85 210 66 100 120 165 195 18 Max. Unit S pF pF pF nC nC nC µs ns ns A/µs µJ ns ns ns ns µJ µJ ns ns ns ns µJ µJ
VCE = 480V, IC = 3 A, VGE = 15V Vce = 0.5 VBR(CES), VGE=15V, Tj = 125°C , RG = 10 Ω VCC = 480 V, IC = 3 A RG = 10Ω, VGE = 15 V VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 25 °C
Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol Vf trr Qrr Irrm Parameter Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions If = 1.5 A If = 1.5 A, Tj = 125 °C If = 3 A ,VR = 35 V, Tj =125°C, di/dt = 100A/µs Min. Typ. 1.31 0.95 45 70 2.7 Max. 1.8 Unit V V ns nC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)
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STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Output Characteristics Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
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STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter V.