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STGP3NB60K Dataheets PDF



Part Number STGP3NB60K
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL IGBT
Datasheet STGP3NB60K DatasheetSTGP3NB60K Datasheet (PDF)

STGP3NB60K - STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH™ IGBT TYPE STGP3NB60K STGD3NB60K STGP3NB60KD STGP3NB60KDFP STGB3NB60KD s s s s s s s VCES 600 V 600 V 600 V 600 V 600 V VCE(sat) (Typ) @125°C < < < < < 2V 2V 2V 2V 2V IC @125°C 3A 3A 3A 3A 3A 3 1 2 1 3 2 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT .

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STGP3NB60K - STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH™ IGBT TYPE STGP3NB60K STGD3NB60K STGP3NB60KD STGP3NB60KDFP STGB3NB60KD s s s s s s s VCES 600 V 600 V 600 V 600 V 600 V VCE(sat) (Typ) @125°C < < < < < 2V 2V 2V 2V 2V IC @125°C 3A 3A 3A 3A 3A 3 1 2 1 3 2 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED TO-220 TO-220FP 3 3 1 1 D PAK 2 DPAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. Std. Version APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE TAPE & REEL May 2002 1/14 STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220 D2PAK VCES VECR VGE IC IC ICM (n) If (1) Ifm (1) PTOT VISO Tstg Tj Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 100°C Collector Current (pulsed) Forward Current Forward Current Pulsed Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C. Storage Temperature Max. Operating Junction Temperature -68 6 3 24 3 24 25 0.75 2500 – 55 to 150 150 -60 Value TO-220FP 600 20 ±20 6 3 24 6 3 24 DPAK V V V A A A A A W W/°C V °C Unit (n ) Pulse width limited by safe operating area (1) For “D” version only THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1.8 62.5 0.5 TO-220FP 5 DPAK 2.1 100 °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20V , VCE = 0 VCE = VGE, IC = 250µA VGE = 15V, VGE = 15V, IC = 3 A IC = 3 A, Tj =125°C 5 2.3 1.9 Min. 600 50 500 ±100 7 2.8 Typ. Max. Unit V µA µA nA V V V 2/14 STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD SWITCHING PARAMETERS Symbol gfs Cies Coes Cres Qg Qge Qgc tscw td(on) tr (di/dt)on Eon tc tr(V.


STGD3NB60K STGP3NB60K STGP3NB60KD


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