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STGD3NB60SD
N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT
PRELIMINARY DATA
TYPE STGD3NB60SD
s
VCES 600 V
V CE(sat) < 1.5 V
IC 3A
s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
3 1
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS GAS DISCHARGE LAMP s STATIC RELAYS s MOTOR CONTROL
s
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V GE IC IC ICM ( • ) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 C Collector Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 600 ± 20 6 3 25 48 0.32 -65 to 175 175
Unit V V A A A W W/ o C
o o
C C
(•) Pulse width limited by safe operating area
March 2000
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THERMAL DATA
R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 3.125 100 1.5
o o
C/W C/W o C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
Symbol V BR(CES) I CES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (V CE = 0) Test Conditions I C = 250 µ A V GE = 0 T j = 25 o C T j = 125 o C V CE = 0 Min. 600 10 100 ± 100 Typ. Max. Unit V µA µA nA
V CE = Max Rating V CE = Max Rating V GE = ± 20 V
ON (∗)
Symbol V GE(th) V CE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V V GE = 15 V Test Conditions I C = 250 µ A I C = 1.5 A IC = 3 A IC = 3 A T j = 125 o C Min. 2.5 1 1.2 1.1 Typ. Max. 5 Unit V V V V
1.5
DYNAMIC
Symbol gf s C ies C oes C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Conditions V CE =25 V V CE = 25 V IC = 3 A f = 1 MHz V GE = 0 Min. 1.7 Typ. 2.5 255 30 5.6 18 5.4 5.5 12 330 40 7 Max. Unit S pF pF pF nC nC nC A
V CE = 480 V
IC = 3 A
V GE = 15 V
V clamp = 480 V T j = 150 o C
R G =1k Ω
SWITCHING ON
Symbol t d(on) tr (di/dt) on E on Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 1kΩ T j = 125 o C IC = 3 A R G = 1kΩ IC = 3 A V GE = 15 V Min. Typ. 125 150 50 1100 Max. Unit ns ns A/µ s µJ
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF
Symbol tc t r (v off ) td (of f ) tf E off (**) tc t r (v off ) td (of f ) tf E off (**) Parameter Test Conditions IC = 3 A V GE = 15 V Min. Typ. 1.8 1.0 3.4 0.72 1.15 2.8 1.45 3.6 1.2 1.8 Max. Unit µs µs µs µs mJ µs µs µs µs mJ
V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 1 k Ω Delay Time Fall Time Turn-off Switching Loss V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 1k Ω Delay Time T j = 125 o C Fall Time Turn-off Switching Loss
IC = 3 A V GE = 15 V
COLLECTOR-EMITTER DIODE
Symbol If I fm Vf t rr Q rr I rrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A If = 1 A If = 3 A dI/dt = 100 A/ µ S V R =200 V T j = 125 o C 1.55 1.15 1700 4500 9.5 Test Conditions Min. Typ. Max. 3 25 1.9 Unit A A V V ns nC A
(•) Pulse width limited by max. junction temperature (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
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Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Off Switching Losses vs Ic
Off Switching Losses vs Tj
Switching Off Safe Operatin Area
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Diode Forward vs Tj Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023.