STGD7NB120S-1

® STGD7NB120S-1 N-CHANNEL 7A - 1200V IPAK Power MESH™ IGBT PRELIMINARY DATA T YPE STGD7NB120S-1 s V CES 1200 V V CE(sat) < 2.1 V IC 7 A s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s INRUSH CURRENT LIMITATION s MOTOR CONTROL 3 2 1 IPAK TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 1200 20 ± 20 10 7 20 55 0.4 -65 to 150 150 Un it V V V A A A W W /o C o o C C () Pulse width limited by safe operating area April 2000 1/6 STGD7NB120S-1 THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 2.27 100 1.5 o o C/W C/W o C/W ELECT...