N-CHANNEL IGBT
STGP3NB60S STGD3NB60S
N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT
TYPE STGP3NB60S STGD3NB60S
s s s s
VCES 600 V...
Description
STGP3NB60S STGD3NB60S
N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT
TYPE STGP3NB60S STGD3NB60S
s s s s
VCES 600 V 600 V
VCE(sat) < 1.5 V < 1.5 V
IC 3A 3A
3 1
3 1 2
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD VERSION)
DPAK TO-220
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s MOTOR CONTROL s LIGHT DIMMER s STATIC RELAYS
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter STGP3NB60S Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature 65 0.32 –65 to 150 150 600 20 ±20 6 3 24 45 Value STGD3NB60S V V V A A A W W/°C °C °C Unit
(q ) Pulse width limited by safe operating area
August 2002
1/10
STGP3NB60S - STGD3NB60S
THERMAL DATA
TO-220 Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1....
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