STGD3NB60S

STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT TYPE STGP3NB60S STGD3NB60S s s s s VCES 600 V 600 V VCE(sat) < 1.5 V < 1.5 V IC 3A 3A 3 1 3 1 2 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD VERSION) DPAK TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOTOR CONTROL s LIGHT DIMMER s STATIC RELAYS ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter STGP3NB60S Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature 65 0.32 –65 to 150 150 600 20 ±20 6 3 24 45 Value STGD3NB60S V V V A A A W W/°C °C °C Unit (q ) Pulse width limited by safe operating area August 2002 1/10 STGP3NB60S - STGD3NB60S THERMAL DATA TO-220 Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1....