STGW50NB60M

STGW50NB60M N-CHANNEL 50A - 600V - TO-247 PowerMESH™ IGBT TYPE STGW50NB60M s s s s VCES 600 V VCE(sat)(25°C) < 1.9 V IC 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY 2 1 3 TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOTOR CONTROL s WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ±20 100 50 400 250 2 –65 to 150 150 Unit V V V A A A W W/°C °C °C (q ) Pulse width limited by safe operating area May 2003 1/9 STGW50NB60M THERMAL DATA Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 0.5 30 0.1 °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emi...