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K4E660812E

Samsung semiconductor

(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out


Description
K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption( Normal or Low ...



Samsung semiconductor

K4E660812E

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