SDB1040

Semiconductor SDB1040 Schottky Barrier Diode Features Low power rectified Silicon epitaxial type High reliability Low IR (IR=10uA Typ) Ordering Information Type No. SDB1040 Marking 1A4 Package Code SOD-123 Outline Dimensions unit : mm 3.4~3.6 2.6~2.8 1.5~1.7 2 1 0.87~0.93 2 1 0.72~0.78 0.15 0.70 PIN Connections 1. Anode 2. Cathode KSD-3032-000 1 SDB1040 Absolute maximum ratings Characteristic Peak reverse voltage Reverse voltage Average Rectified Forward current Non-repetitive peak surge forward current Junction temperature Storage temperature Ta=25°C Symbol VRM VR IF IFSM Tj Tstg Rating 40 40 1.0 3 150 -55~150 Unit V V A A °C °C Electrical Characteristics Characteristic Forward voltage Reverse current Total capacitance Ta=25°C Symbol VF IR CT IF=1A VR=40V Test Condition Min. Typ. Max. 0.5 50 0.55 200 - Unit V µA pF VR=10V, f=1MHZ * Pulse Test : Pulse width ≤250us, Duty ≤ 2% KSD-3032-000 2 SDB1040 Electrical Characteristic Curves 00 Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics Fig. 3 Total Capacitance Fig. 4 IF – PF Forward Power dissipation KSD-3032-000 3 SDB1040 These AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.). Please make sure that you consult with us before you use these AUK products in equipments which require high quality and/or reliability, and in equipments which could have major impact to th...