Preliminary data
SDP10S30, SDB10S30 SDT10S30
Silicon Carbide Schottky Diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark No reverse recovery
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Product Summary V VRRM 300 Qc IF
P-TO220-2-2. P-TO220-3.SMD
23 10
P-TO220-3-1.
nC A
No temperature influence on
the switching behavior
No forw...
