Semiconductor
SDB110Q
Schottky Barrier Diode
Features
• Low power rectified • Silicon epitaxial type • Battery changi...
Semiconductor
SDB110Q
Schottky Barrier Diode
Features
Low power rectified Silicon epitaxial type Battery changing diode
Ordering Information
Type No. SDB110Q Marking S3 Package Code SOD-523
Outline Dimensions
unit : mm
0.2 Min.
1.6±0.1 1.2±0.1
0.8±0.1
2
1
1
2
0.6±0.1
0~0.1
PIN Connections 1. Anode 2. Cathode
KSD-E009-001
1
SDB110Q
Absolute maximum ratings
Characteristic
Reverse voltage Repetitive peak forward current Forward current Junction temperature Storage temperature
(Ta=25° C)
Symbol
VR IFRM IF Tj Tstg
*
Ratings
10 0.5 30 150 -55 ~ 150
Unit
V A mA °C °C
* : δ = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit rating× 1.5
Electrical Characteristics
Characteristic
Forward voltage 1 Forward voltage 2 Reverse current ESD-Capability
(Ta=25° C)
Test Condition
IF =1mA IF =10mA VR =5V C=200pF, RL=100 Both forward reverse direction 5 pulse
Symbol
VF(1) VF(2) IR -
Min.
0.1 225
Typ.
-
Max.
0.3 0.35 0.5
Unit
V V µA V
KSD-E009-001
2
SDB110Q
Electrical Characteristic Curves
Fig. 1 IF-VF Fig. 2 IR -VR
KSD-E009-001
3
...
