BUF742

BUF742 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 550 900 11 5 7.5 2.5 4 50 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25°C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 2.5 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 1 (8) BUF742 Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage g DC forward current transfer ratio Test Conditions VCE = 900 V VCE = 900 V; Tcase = 150°C IC = 500 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 0.8 A; IB = 0.2 A IC = 2.5 A; IB = 0.8 A IC = 0.8 A; IB = 0.2 A IC = 2.5 A; IB = ...