HCT7000

Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features 200mA ID Ultra small surface mount package RDS(ON) < 5Ω Pin-out compatible with most SOT23 MOSFETS Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Power Dissipation (TA = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Power Dissipation (TS(1) = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW(2) Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C Thermal Resistance R∅ JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100o C/W Thermal Resistance R∅ JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583o C/W Notes: (1) TS = Substrate temperature that the chip carrier is mounted on. (2) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measurable as an outgoing test. Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip...