F29C51004

SyncMOS F29C51004T/F29C51004B 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention. The F29C51004T/F29C51004B offers a combination of: Boot Block with Sector Erase/Write Mode. The end of write/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. TheF29C51004T/F29C51004B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase. Boot block architecture enables the device to boot from a protected sector located either at the top (F29C51004T) or the bottom (F29C51004B). All inputs and outputs are CMOS and TTL compatible. The F29C51004T/F29C51004B is ideal for applications that require updatable code and data storage. Features s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 50µA (Max) Hardware Data Protection L...