BUK9880-55A

BUK9880-55A TrenchMOS™ logic level FET M3D087 Rev. 01 — 07 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9880-55A in SOT223 (SC-73). 2. Features s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. c c 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223 (SC-73), simplified outline and symbol Description gate (g) 4 Simplified outline Symbol drain (d) source (s) drain (d) 1 Top view d g 2 3 MSB002 - 1 MBB076 s SOT223 (SC-73) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BUK9880-55A TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tsp = 25 °C; VGS = 5 V Tsp = 25 °C VGS = 5 V; ID = 8 A; Tj = 25 °C VGS = 4.5 V; ID = 8 A; Tj = 25 °C VGS = 10 V; ID = 8 A; Tj = 25 °C Typ − − − − 68 − − Max 55 7 8 150 80 89 73 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IDR IDRM...