Composite Transistors
XP01401 (XP1401)
Silicon PNP epitaxial planar type
(0.425)
Unit: mm
0.12+0.05 –0.02
For general...
Composite
Transistors
XP01401 (XP1401)
Silicon
PNP epitaxial planar type
(0.425)
Unit: mm
0.12+0.05 –0.02
For general amplification ■ Features
Two elements incorporated into one package (Emitter-coupled
transistors) Reduction of the mounting area and assembly cost by one half
0.20±0.05 5 4
1.25±0.10 2.1±0.1
1
2
3
(0.65) (0.65) 1.3±0.1 2.0±0.1 10˚
■ Basic Part Number
2SB0709A (2SB709A) × 2
0.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating −60 −50 −7 −100 −200 150 150 −55 to +150 Unit V V V mA mA mW °C °C
Tr1
1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A
0 to 0.1
0.9+0.2 –0.1
4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package
Marking Symbol: 5V Internal Connection
5 4
5˚
Tr2
1
2
3
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE(Small/
Large)
Conditions IC = −10 µ...