MMBT3904K

MMBT3904K NPN Epitaxial Silicon Transistor February 2005 MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor 3 Marking 2 1 1AK SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 60 40 6 200 350 150 Units V V V mA mW °C Collector Power Dissipation Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain * Test Condition IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 30V, VEB = 3V VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VCB = 5V, IE = 0, f = 1MHz VCE = 20V, IC = 10mA, f = 100MHz IC = 100µA, VCE = 5V, RS = 1KΩ f = 10Hz to 15.7KHz VCC = 3V, VBE = 0.5V IC = 10mA, IB1 = 1mA VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA Min. 60 40 6 Max. Units V V V 50 40 70 100 60 30 nA 300 VCE(sat) VBE(sat) Cob fT NF tON tOFF Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Output Capacitance Current Gain-Bandwidth Product Noise Figure Turn On Time Turn Off Time 0.2 0.3 0.65 0.85 0.95 4 300 5 70 250 V V ...