BUK9214-30A

DPAK BUK9214-30A N-channel TrenchMOS logic level FET Rev. 3 — 14 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V loads  Automotive and general purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 25 A; Tj = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 VGS = 5 V; ID = 25 A; VDS = 24 V; Tj = 25 °C; see Figure 13 ID = 63 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 30 V - - 63 A - - 107 W - - 15.5 mΩ - 9 12 mΩ - 11 14 m...