HFA160MD40D

PD-2.509 rev. A 12/98 HFA160MD40D HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode Anode 1 AC Cathode 2 Isolated Base V R = 400V V F(typ.)ƒ = 0.9V IF(AV) = 160A Qrr (typ.) = 260nC IRRM(typ.) = 7.1A trr(typ.) = 50ns di(rec)M/dt (typ.)ƒ = 260A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current  Non-Repetitive Avalanche Energy ‚ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range TO-244AB (ISOLATED) Max. 400 142 68 900 1.4 225 91 -55 to +150 Units V A mJ W C Thermal - Mechanical Characteristics Parameter RthJC RthCS Wt Junction-to-Case, Single Leg Conducting Junction-to-Case, Both Legs Conducting Case-to-Sink, Fl...