VEC2901

Ordering number : ENN8198 VEC2901 VEC2901 Features TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 30 ±10 150 600 0.25 150 --55 to +150 V V mA mA W °C °C VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (900mm2!0.8mm) 1unit 100 50 6 5 8 1.1 150 --55 to +150 V V V A A W °C °C Symbol Conditions Ratings Unit Electrical Characteristics at Ta=25°C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1.6A, IB=53mA IC=2A, IB=40mA 250 330 26 55 75 110 150 100 100 400 MHz pF mV mV nA nA Symbol Conditions Ratings min typ max Unit Marking : AA Co...