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STTH60P03S

ST Microelectronics

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

STTH60P03S Ultrafast rectifier PDP energy recovery Features  Ultrafast recovery allowing high sustain frequency  Dec...


ST Microelectronics

STTH60P03S

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STTH60P03S Ultrafast rectifier PDP energy recovery Features  Ultrafast recovery allowing high sustain frequency  Decrease charge evacuation time in the inductance  Minimize switching-on and total power losses  Increase luminous efficiency and brightness  Soft and noise-free recovery  High surge capability  High junction temperature Description The STTH60P03SW is an ultrafast recovery power rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery circuit have been optimized to decrease power losses. Datasheet  production data A K A TO-247 STTH60P03SW Table 1. Device summary Symbol Value IF(AV) VRRM VFP (typ) IRM (typ) Tj VF (typ) 60 A 300 V 2.5 V 6A 175 °C 0.9 V March 2013 This is information on a product in full production. DocID10966 Rev 4 1/9 www.st.com 9 Characteristics 1 Characteristics STTH60P03S Symbol Table 2. Absolute ratings (limiting values) Parameter VRRM IF(RMS) IF(AV) IFSM Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current IFRM Repetitive peak forward current tp = 10 ms Sinusoidal F = 200 kHz, tp = 500 ns Sinusoidal, TC = 155 °C Tstg Storage temperature range Tj Maximum operating junction temperature Value 300 80 60 250 Unit V A A A 150 A -65 to + 175 175 °C °C Symbol Table 3. Thermal parameters Parameter Rth(j-c) Junction to case Zth(j-c) Transient thermal resistance at 1 µs Value 0.8 0.002 Unit °C/...




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